Title:
METHOD FOR GROWING SILICON EPITAXIAL FILM
Document Type and Number:
Japanese Patent JPS5840821
Kind Code:
A
Abstract:
PURPOSE:To obtain a high-quality grown film having a few crystal defect and no impurity crawling from a substrate by a method wherein HCl is included in a silicon compound which is original gas when an epitaxial film is grown on a semiconductor substrate by vacuum vapor reactor. CONSTITUTION:A plurality of P type Si substrates are vertically erected with some space in a quartz reaction tube and the reaction tube is heated at 1,050 deg.C by using an electric furnace and pressure is reduced to 2 Torrs by a rotary pump. Next, H2, SiHCl3, PH3, HCl are poured into the reaction tube for 30min at a flow rate of 20l, 400cc, 10cc and 200cc per minute respectively and an N type layer is epitaxially grown on the surface of an Si substrate. In this way, the grown layer having a few crystal defect is obtained.
Inventors:
FURUMURA YUUJI
NISHIZAWA TAKESHI
NISHIZAWA TAKESHI
Application Number:
JP13863081A
Publication Date:
March 09, 1983
Filing Date:
September 04, 1981
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L21/205; (IPC1-7): H01L21/205
Attorney, Agent or Firm:
Aoki Akira