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Title:
【発明の名称】光電変換装置
Document Type and Number:
Japanese Patent JP2735541
Kind Code:
B2
Abstract:
PURPOSE:To provide the title photoelectric conversion device capable of highly accurate photoelectric conversion by a method wherein the voltage of rear gates of MOS transistors converting short-circuit current of multiple photodiodes is equalized with the potential of mutually connected anode electrodes of photodiodes. CONSTITUTION:The short-circuit current generated in photodiodes 3, 4 is converted by means of a conventional circuit as usual, however, the voltage of rear gates of N-ch MOS transistors 2-1, 2-2 is equalized with the potential of anode electrodes of photodiodes 3, 4. Through these procedures, the potential difference between source, drain and channel parts of MOS transistors constituting a switch and the rear gates can be eliminated so that the leak current between the source, drain and channel part of this MOS transistors and the rear gates may be reduced approximately to naught. Resultantly, almost all short-circuit current generated in photodiode 3, 4 can be fed to another diode 8 to be converted into voltage providing the photoelectric conversion with high accuracy.

Inventors:
SHINOMYA KOJI
MURAO FUMIHIDE
Application Number:
JP12457286A
Publication Date:
April 02, 1998
Filing Date:
May 29, 1986
Export Citation:
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Assignee:
MITSUBISHI DENKI KK
International Classes:
H01L31/10; G01J1/44; H01L31/02; (IPC1-7): H01L31/10; G01J1/44
Domestic Patent References:
JP56156041A
JP50104645A
JP6181677A
JP57173228A
Other References:
【文献】特許2536842(JP,B2)
Attorney, Agent or Firm:
Kenichi Hayase



 
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