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Title:
【発明の名称】光起電力素子及びその製造方法
Document Type and Number:
Japanese Patent JP2785882
Kind Code:
B2
Abstract:
PURPOSE:To prevent the deterioration of characteristics such as short-circuit photocurrent, photoelectromotive force and fill factor by distributing tin atoms in a glass support in such manner that the tin atoms decrease inward from the surface with a transparent substrate formed thereon. CONSTITUTION:A p-type layer 106, i-type layer 105, n-type layer 104 and conductive layer 110 composed of unsingle crystalline silicon semiconductor are laminated on a substrate with transparent electrode 107 constituted by the formation on a glass support 101 of the transparent electrode 107 formed by at least one layer out of tin oxide layer and indium-tin oxide layer. In this case, tin atoms are distributed in the glass support 101 in the manner of decreasing inward from the surface with the transparent electrode 107 formed thereon. Thus, even in a high-temperature high-humidity environment and even by an ultraviolet-light irradiation for a long period of time, it is possible to prevent the deterioration of characteristics such as short-circuit photocurrent, photoelectromotive force and fill factor in a photovoltaic element.

Inventors:
SAITO KEISHI
AOIKE TATSUYUKI
Application Number:
JP24493491A
Publication Date:
August 13, 1998
Filing Date:
August 30, 1991
Export Citation:
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Assignee:
KYANON KK
International Classes:
C03C4/14; C03C17/34; H01L31/04; (IPC1-7): H01L31/04
Domestic Patent References:
JP60147174A
JP58112375A
JP1103882A
Attorney, Agent or Firm:
Fukumori Hisao