Title:
SAMPLE TREATMENT METHOD
Document Type and Number:
Japanese Patent JPH088235
Kind Code:
A
Abstract:
PURPOSE: To improve throughput when treating a sample where etching treatment as well as corrosion-resistance treatment are required.
CONSTITUTION: A sample treatment device consists of means 20 and 50 for turning a gas 111 for etching into plasma, a treatment chamber 90 where a sample is etched utilizing the plasma of the gas for etching, a means for turning a corrosion-resistance gas 113 capable of eliminating an adhesive generated by the etching treatment of the sample into plasma, a means 61 for retaining a sample 70 which is treated by utilizing the plasma of the gas for etching and the corrosion-resistance gas, and a treatment chamber 91 where a sample 70 whose corrosion-resistance treatment is completed is post-treated.
Inventors:
FUJIMOTO KOTARO
TANAKA YOSHIE
KAWAHARA HIRONORI
SATO HITOAKI
TANAKA YOSHIE
KAWAHARA HIRONORI
SATO HITOAKI
Application Number:
JP1230895A
Publication Date:
January 12, 1996
Filing Date:
January 30, 1995
Export Citation:
Assignee:
HITACHI LTD
HITACHI TECHNO ENG
HITACHI TECHNO ENG
International Classes:
C23F4/00; H01L21/302; H01L21/3065; H01L21/316; H01L21/3213; (IPC1-7): H01L21/3065; C23F4/00; H01L21/316; H01L21/3213
Domestic Patent References:
| JPS63245926A | 1988-10-13 | |||
| JPS63150922A | 1988-06-23 | |||
| JPS62234332A | 1987-10-14 | |||
| JPS5713743A | 1982-01-23 | |||
| JPS6482550A | 1989-03-28 | |||
| JPS5655050A | 1981-05-15 | |||
| JPS61290740A | 1986-12-20 |
Attorney, Agent or Firm:
Ogawa Katsuo
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