Title:
【発明の名称】プラズマ増強化学蒸着のためのプラズマ装置
Document Type and Number:
Japanese Patent JP2619862
Kind Code:
B2
Abstract:
Chemical vapor deposition on a semiconductor wafer is obtained in a plasma reactor having a plurality of lamps for radiantly heating the wafer. Calibrated temperature sensing means remote from the wafer is used to control the heating of the wafer. Gases are supplied by way of a plurality of tubes extending radially inwardly from the sides of the chamber. A beffle is provided to form an antechamber which aids in the uniformity of the deposition. The plasma is ignited for less than the whole deposition cycle for deposition of tungsten disilicide.
Inventors:
JB Price
Matthew Leroy Bunch
Robert William Stitz
Matthew Leroy Bunch
Robert William Stitz
Application Number:
JP18026586A
Publication Date:
June 11, 1997
Filing Date:
August 01, 1986
Export Citation:
Assignee:
Balzers Akchengezel Shaft
International Classes:
C23C16/48; C23C16/509; H01L21/205; C23C16/50; H01L21/31; (IPC1-7): C23C16/50; H01L21/205; H01L21/31
Attorney, Agent or Firm:
Kyozo Yuasa (6 people outside)