Title:
【発明の名称】プラズマエッチング装置及びプラズマエッチング方法
Document Type and Number:
Japanese Patent JP2972707
Kind Code:
B1
Abstract:
An apparatus for plasma etching comprises a chamber, a gas inlet port provided in the chamber to introduce etching gas into the chamber, a gas outlet port provided in a side portion of the chamber to exhaust the gas from said chamber, a sample stage provided within the chamber, and a spiral coil disposed externally of the chamber and in opposing relation with the sample stage to generate a plasma composed of the etching gas with a high-frequency induction field. The higher-voltage region of the spiral coil and the exhaust-side region of the sample stage are positioned on substantially the same side relative to the center axis of the chamber.
Inventors:
OOKUNI MITSUHIRO
Application Number:
JP9113298A
Publication Date:
November 08, 1999
Filing Date:
April 03, 1998
Export Citation:
Assignee:
MATSUSHITA DENSHI KOGYO KK
International Classes:
H01L21/302; H01J37/32; H01L21/027; H01L21/3065; H01L21/311; H01L21/3213; (IPC1-7): H01L21/3065
Domestic Patent References:
| JP9180897A | ||||
| JP8148476A | ||||
| JP6267903A | ||||
| JP1064882A |
Attorney, Agent or Firm:
Hiroshi Maeda (2 outside)