Title:
METHOD OF FORMING P TYPE HG(1-X)CD(X)TE CRYSTAL OHMIC ELECTRODE
Document Type and Number:
Japanese Patent JPH0750425
Kind Code:
A
Abstract:
PURPOSE: To provide an electrode easily chemically etched substituting for conventional Au electrode without changing the electrode characteristics at low cost in order to form a P type MCT crystal ohmic electrode.
CONSTITUTION: This ohmic electrode forming method of P type Hg(1-X)Cd(X)Te crystal is characterized by evaporating Al by vacuum evaporating process while sustaining the crystal temperature of not exceeding 370°K after mirror etch processing and drying an electrode forming surface in a crystal having composition ratio code X within the range of 0.1-0.5 out of the P type Hg(1-X)Cd(X)Te crystal.
Inventors:
MATSUMOTO HIROSHI
Application Number:
JP21217393A
Publication Date:
February 21, 1995
Filing Date:
August 04, 1993
Export Citation:
Assignee:
SUMITOMO METAL MINING CO
International Classes:
H01L21/28; H01L31/0264; (IPC1-7): H01L31/0264; H01L21/28
Attorney, Agent or Firm:
Yoshihisa Oshida
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