PURPOSE: To enable to improve the efficiency by deleting the structure part similar to a thyristor, thereby reducing the reactive current.

CONSTITUTION: A P type InP layer 12 is formed on an N type InP substrate 11 which has (100) crystal surface as a main surface, a mask 13 which has a striped hole is formed, for example, by a dioxidized silicon, a section is formed in V- shape, and a groove 14 exposed (111) B surface is etched. Then, the mask 13 is removed, the N type InP first clad layer 15, an InGaAsP active layer 16, a P type InP second clad layer 17 and a P type InGaAsP cap layer 18 are sequentially grown epitaxially. In this growth, an N type InP layer 15' and the InGaAsP layer 16' are grown on the layer 12 outside the groove 14. Then, a mask 21 of SiO2 is provided, an N type InP layer 20 is selectively removed, and a striped hole exposed with the layer 18 if formed. Eventually, a P type side electrode 22, and an N type side electrode 23 are respectively formed.