PURPOSE: To resolve the dependence on the base layer causing the irregularity of surface shape in a growth film by quality and surface condition of a base material, a change in growth speed, etc., by performing a short-period growth at a specified low pressure for a specified period in an initial stage of thermal CVD where an organic silicon compound and ozone gas (O3) are utilized.
CONSTITUTION: A substrate is inserted at A point of a time/pressure chart where a CVD reaction chamber is evacuated, and after a transfer operation is completed, a carrier gas N2 is introduced at B point and the pressure is kept at a low value of less than 10KPa. At C point where the pressure is stabilized, a TEOS is introduced and an oxygen containing a highly concentrated ozone is supplied so as to start a growth operation. An initial growth is performed at a low pressure between points D and E for a short period of about 30sec. Then, an evacuated amount is increased to increase the pressure within the reaction chamber upto a high pressure indicated by F point. Between points F and G of high pressure, a main growth is performed, and the supply of a reaction gas is stopped at G point and the chamber is evacuated, then the substrate is taken out at H point.
HONMA YOSHIO
NAKANISHI SHIGEHIKO
KOBAYASHI NOBUYOSHI
KUDO YUTAKA
HITACHI ELECTR ENG