Title:
GROWING METHOD OF SINGLE CRYSTAL
Document Type and Number:
Japanese Patent JPS5820795
Kind Code:
A
Abstract:
PURPOSE:To grown a crystal with a few vacancies, e.g. striations, continuously, by feeding an atmosphere containing a crystal composition or a compound of the crystal composition to the interior of a single crystal pulling apparatus, and reducing the crystal growing temperature. CONSTITUTION:An InP single crystal which is a compound of Groups III-V containing P is grown as follows: A polycrystalline InP and In in a specific proportion are placed in a quartz crucible 2-1, and the interior of a container 2-4 is evacuated and then filled with N2 gas 2-5 of high purity. The N2 gas is then steadily passed through the container 2-4. The raw materials are molten by the induction heating, and a seed crystal 2-7 located above the crucible 2 is then lowered while rotated and brought into contact with the surface of the melt 2-3 at a given crucible temperature. The seed crystal 2-7 is then lifted slowly to thicken a crystal 2-17 and evaporate PCl3 indicated by 2-9. The evaporated PCl3 is then fed into the surface of the melt in the container 2-4. The flow rate of the PCl3 is limited to keep the crystal uniform and deviation of the composition ratio of the melt uniform. Thus, the aimed InP single crystal of high quality with almost no contrast of growth streaks is obtained.
Inventors:
TERAJIMA KAZUTAKA
Application Number:
JP11843081A
Publication Date:
February 07, 1983
Filing Date:
July 30, 1981
Export Citation:
Assignee:
TOKYO SHIBAURA ELECTRIC CO
International Classes:
C30B15/00; C30B29/40; H01L21/208; (IPC1-7): C30B15/00; C30B29/40; H01L21/18
Attorney, Agent or Firm:
Noriyuki Noriyuki