Title:
【発明の名称】選択的プラズマ成長
Document Type and Number:
Japanese Patent JPH09501612
Kind Code:
A
Abstract:
A deposition process provides selective areal deposition on a substrate surface having separate areas of different materials comprises forming a plasma over the substrate, injecting coating species into the plasma by either of sputtering or gaseous injection, adding a reactive gas for altering surface binding energy at the coating surface, and biasing the substrate during deposition to bombard the substrate with ionic species from the plasma. Surface binding energy is altered, in the general case, differently for the separate areas, enhancing selectivity. Bias power is managed to exploit the alteration in surface binding energy. In the case of gaseous injection of the coating species, and in some cases of sputtering provision of the coating material, the temperature of the substrate surface is managed as well. In an alternative embodiment, selectivity is to phase of the coating material rather than to specific areas on the substrate, and a selected phase may be preferentially deposited on the substrate.
Inventors:
Ray, Mark A.
McGuire, Gary E.
McGuire, Gary E.
Application Number:
JP52649295A
Publication Date:
February 18, 1997
Filing Date:
April 07, 1995
Export Citation:
Assignee:
Ray, Mark A.
McGuire, Gary E.
McGuire, Gary E.
International Classes:
B05D3/06; B01J19/08; C23C14/04; C23C14/06; C23C14/14; C23C14/32; C23C14/34; C23C16/02; C23C16/04; C23C16/27; C23C16/50; C30B25/06; C30B29/04; H01L21/203; H01L21/205; H01L21/28; H01L21/285; (IPC1-7): B05D3/06; B01J19/08; C23C14/06; C23C14/14; C23C14/34; C23C16/02; C23C16/50; C30B25/06; C30B29/04; H01L21/203; H01L21/205; H01L21/285
Attorney, Agent or Firm:
Shoichi Monma