Title:
FORMATION OF FINE PATTERN
Document Type and Number:
Japanese Patent JPS604215
Kind Code:
A
Abstract:
PURPOSE:To obtain a resist pattern with a high accuracy even on a foundation substrate with a high reflection coefficient and a step by a method wherein a reflection preventing film, which suppresses the reflection of a light whose wavelength is within the range of the light by which a photoresist is exposed, is formed on the surface of the foundation substrate and then the photoresist layer is formed. CONSTITUTION:Silanol or organosilanol, doped with coloring matter which absorbs the light whose wavelength is in the range of the light by which a photoresist is exposed, is applied on a foundation substrate 1 which a step and a high reflection coefficient as a reflection preventing film 3 and a silicon oxide film, subjected to a heat-treatment, is formed. Then a photoresist layer 2 is formed by coating and exposed and developed. With this constitution, an influence of the reflective light is relieved and an accurate resist pattern can be obtained.
Inventors:
NISHIOKA KIYUUSAKU
ITAKURA HIDEAKI
ITAKURA HIDEAKI
Application Number:
JP11305883A
Publication Date:
January 10, 1985
Filing Date:
June 21, 1983
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L21/027; G03F7/09; (IPC1-7): H01L21/30
Attorney, Agent or Firm:
Masuo Oiwa
Next Patent: JPS604216