Title:
HETEROJUNCTION BIPOLAR TRANSISTOR WITH EMITTER FOR HIGH POWER AND ITS MANUFACTURE
Document Type and Number:
Japanese Patent JPH077013
Kind Code:
A
Abstract:
PURPOSE: To provide an emitter structure for a hetero-junction bipolar transistor which is operated stably, even by a large power by connecting the emitter layer of specified composition while providing a clear boundary surface with a base layer. CONSTITUTION: An InGaAs emitter contact body layer 4, to which impurities are added in a large amount is arranged next to a GaAs buffer layer 5 to which the impurities, are added in a smaller amount. The GaAs buffer layer 5 is arranged between the emitter contact body layer 4 and an emitter ballast layer 6. In an interface layer 7 between the emitter ballast layer 6 and a base layer 8, the mol concentration of Al is gradually reduced from a concentration at the boundary with the emitter ballast layer 6 to a concentration of zero in the base layer 8. In this case, the emitter ballast layer 6 is comprised of Alx Ga1-x As, where x>0.4. Thus, an AlGaAs layer is operated as both an active emitter and a ballast resistor to the transistor.
Inventors:
UIRIAMU UEI CHIYUNGU RIU
DARERU JII HIRU
DARERU JII HIRU
Application Number:
JP6407093A
Publication Date:
January 10, 1995
Filing Date:
March 23, 1993
Export Citation:
Assignee:
TEXAS INSTRUMENTS INC
International Classes:
H01L29/205; H01L21/331; H01L29/08; H01L29/73; H01L29/737; (IPC1-7): H01L21/331; H01L29/73; H01L29/205
Attorney, Agent or Firm:
Akira Asamura (2 outside)
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