Title:
【発明の名称】半導体薄膜蒸着装置
Document Type and Number:
Japanese Patent JP3073489
Kind Code:
B2
Abstract:
An apparatus for depositing thin films on a semiconductor wafer. The thin film deposition apparatus includes a reactor block receiving a semiconductor wafer; a shower head plate covering the reactor block to maintain the internal pressure of the reactor block at a predetermined level; a reaction gas supply connected to the shower head plate, for supplying reaction gases; an inert gas supply connected to the shower head plate, for supplying an inert gas; an exhaust portion connected to the reactor block, for exhausting the gases out of the reactor block; and a diffusion plate installed in the shower head plate, having a plurality of passages connected to the source of inert gas supply, a plurality of nozzles connected to the passages, the inert gas sprayed through the nozzles lowering a wall of inert gas along the inner wall of the reactor block, and a plurality of spray holes, the reaction gases spread over the wafer through the spray holes.
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Inventors:
Choi source
Kure Kei cloud
Kure Kei cloud
Application Number:
JP13686699A
Publication Date:
August 07, 2000
Filing Date:
May 18, 1999
Export Citation:
Assignee:
IPS Limited
International Classes:
H01L21/205; C23C16/44; C23C16/455; H01L21/00; H01L21/20; (IPC1-7): H01L21/205
Domestic Patent References:
| JP62176123A | ||||
| JP60179033U |
Attorney, Agent or Firm:
Hironobu Onda