Title:
【発明の名称】半導体波長可変装置
Document Type and Number:
Japanese Patent JP2907234
Kind Code:
B2
Abstract:
PURPOSE:To obtain a semiconductor wavelength varying device having a wide continuous wavelength sweeping width by forming a waveguide including a diffraction grating in a stripe state, and continuously bending the waveguide in a direction where the light travels. CONSTITUTION:An n-type InGaAsP optical guide layer 2, an undoped MQW active layer 3 and a p-type InGaAsP optical guide layer 4 are continuously grown on an n-type InP substrate 1 by a liquid growing method. Then, after an uneven diffraction grating 20 is formed on the layer 4, a p-type InP clad layer 5 and a p-type InGaAsP electrode layer 6 are continuously grown. Thereafter, after a thin SiO2 film is formed on the entire surface by a sputtering method, the thin film is formed in a curved stripe state by photoetching. Subsequently, with the thin film as a mask it is etched until it reaches the substrate 1, and a p-type InP layer 7 and an n-type InP layer 8 are formed. Then a p-type ohmic electrode 9 is formed on the entire surface, a groove 11 is formed by reactive ion etching, and a waveguide G is buried therein.
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Inventors:
KYOKU KATSUAKI
NOGUCHI ETSUO
OKAMOTO MINORU
MIKAMI OSAMU
NOGUCHI ETSUO
OKAMOTO MINORU
MIKAMI OSAMU
Application Number:
JP40519190A
Publication Date:
June 21, 1999
Filing Date:
December 21, 1990
Export Citation:
Assignee:
NIPPON DENSHIN DENWA KK
International Classes:
G02F1/025; H01S5/00; H01S5/026; H01S5/042; H01S5/11; (IPC1-7): H01S3/18
Domestic Patent References:
| JP196983A | ||||
| JP61288480A |
Other References:
ＩＥＥＥ Ｐｈｏｔｏｎ．Ｔｅｃｈ．Ｌｅｔｔ．５［１］（１９９３）ｐ．１０−１２
Attorney, Agent or Firm:
Yoshikazu Tani