PURPOSE: To obtain a thin film capacitor capable of further improving electric characteristics determined from the characteristics of a polymer layer formed as dielectric substance by a vapor deposition polymerization method.
CONSTITUTION: A thin film capacitor 1 is provided with a substrate 2 on which multilayered structure 5 constituted of film type inner electrodes 3a, 3b, 3c and film type dielectric substance 4a, 4b is formed. The dielectric substance 4a, 4b is composed of a polymer film of phloroalkylated aromatic polyimide containing N-methylacridimium-7,7,8,8-tetracyanoquino dimethane complex (which is called 'TCNQ complex' hereafter). The polymer film of pholoroalkylated aromatic polyimide containing the TCNQ complex is formed by a vapor deposition polymerization method applying the following to evaporation source material; monomer of 2-2 bis (4-aminophenyl) hexaphloropropane, monomer of pyromellitic dihydride and crystal of TCNQ complex.
YAGISHITA HIROSHI
NOZOE SHOICHI
SUZUKI MIKIO
SHINODA YOSHIRO
MIYASOTO MASAHIDE
RUBIKON DENSHI KK