PURPOSE: To provide a semiconductor device, which can be easily miniaturized, is actuated at high speed and is capable of realizing a small collector-emitter saturation voltage CVE (sat).

CONSTITUTION: The respective regions of a collector 12, a base 22 and an emitter 24 are provided in a semiconductor substrate 10 and at the same time, a semiconductor layer 26 and a conductive layer B are respectively connected to the collector 12 and the base 22. The layer 26 and the layer B are Shottky- junctioned to each other and are made to short-circuit with each other. As a Schottky barrier diode SD is obtained by making the layers 26 and B short- circuit with each other, the diode SD is not formed in the substrate 10. Thereby, an irregularity in the characteristics of the diode SD is reduced and moreover, a miniaturization of the diode is also contrived easily. Moreover, it is possible to control the characteristics of the diode SD without controlling transistor characteristics and moreover, the parasitic capacitance of the diode is also reduced.