Title:
【発明の名称】薄膜形成法
Document Type and Number:
Japanese Patent JP2730693
Kind Code:
B2
Abstract:
PURPOSE:To form a thin film such as a-Si and Tin in a large area by supplying a specified gaseous mixture to the discharge space on a sample plate and causing glow discharge by high-frequency voltage impressed to a counter electrode at the pressure close to the atmospheric pressure. CONSTITUTION:The gaseous mixture of a gaseous raw material and H2 is introduced through a nozzle 5 and high-frequency voltage is impressed to an electrode 2. Pressure is regulated to the atmospheric pressure or the pressure close thereto. Glow discharge is caused between the electrodes. Since the rate of H2 is made large, glow discharge is caused even at the atmospheric pressure and stably maintained. The gaseous mixture is excited and made plasma. A sample base plate 4 is preheated by a heater 7 and a thin film is formed on the base plate. Therein the distance (g) between the sample base plate 4 and the electrode 2 is regulated to 10mm or below in order to spread a range for causing glow discharge, to prevent localization of discharge and also to uniformize intensity of discharge.
Inventors:
OKAZAKI SACHIKO
KOKOMA MASUHIRO
TOMIKAWA TADASHI
FUJITA NOBUHIKO
KOKOMA MASUHIRO
TOMIKAWA TADASHI
FUJITA NOBUHIKO
Application Number:
JP23055588A
Publication Date:
March 25, 1998
Filing Date:
September 14, 1988
Export Citation:
Assignee:
SUMITOMO DENKI KOGYO KK
OKAZAKI SACHIKO
KOKOMA MASUHIRO
OKAZAKI SACHIKO
KOKOMA MASUHIRO
International Classes:
C23C16/24; C23C16/34; C23C16/50; H01L21/205; H01L31/04; (IPC1-7): C23C16/50; C23C16/24; H01L21/205; H01L31/04
Domestic Patent References:
| JP273978A | ||||
| JP6350478A |
Attorney, Agent or Firm:
Shigeki Kawase