Title:
MANUFACTURE OF LSI SUBSTRATE
Document Type and Number:
Japanese Patent JPH0629168
Kind Code:
A
Abstract:
PURPOSE: To freely and respectively control thickness of a buried oxide layer and surface silicon single crystal film in the SOI structure of LSI substrate.
CONSTITUTION: A buried amorphous layer 3 is formed by simultaneously or alternately conducting implantation of oxygen ions and vacuum deposition of silicon atoms to an LSI substrate 8a made of a single crystal silicon wafer 1. Thereafter, high temperature annealing is carried out at a time to convert the buried amorphous layer 3 into the buried oxide layer 5.
Inventors:
ISHIKAWA YUKARI
SHIBATA NORIYOSHI
SHIBATA NORIYOSHI
Application Number:
JP10161492A
Publication Date:
February 04, 1994
Filing Date:
March 26, 1992
Export Citation:
Assignee:
NIPPON DENSO CO
TOYOTA MOTOR CORP
TOYOTA MOTOR CORP
International Classes:
H01L21/02; H01L27/12; (IPC1-7): H01L21/02; H01L27/12
Attorney, Agent or Firm:
Hidehiko Okada (2 outside)
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