PURPOSE: To provide a microwave plasma processing apparatus wherein plasma high in density and stability is generated, and ions impinging on a substrate are uniform in energy throughout the surface of the substrate.
CONSTITUTION: A cavity resonator 1 is connected to a waveguide, whereby microwaves amplified in amplitude by resonance inside the cavity resonator 1 are radiated into a plasma generating chamber 6 through a slit to produce plasma of high density. That is, a microwave resonant section and a plasma generating section are so separated from each other as to prevent plasma from being generated in the microwave resonant section. By this setup, plasma can be stably generated without changing microwaves in a resonant state. Therefore, ions or radicals can be made to impinge on a work uniform in effect. In the result, a plasma treatment can be carried out with high speed ions optimal in energy. Furthermore, a uniform film can be formed at a high speed.
YAMAGUCHI YASUHIRO
TAKEUCHI NAOHIKO
| JPS6213575A | 1987-01-22 | |||
| JPS5613480A | 1981-02-09 | |||
| JPS5696841A | 1981-08-05 |