Title:
【発明の名称】トンネル素子
Document Type and Number:
Japanese Patent JP3102475
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a tunnel element which enhances the current drive ability and is capable of high-speed operation. SOLUTION: A first insulation film 107 exists on a semiconductor substrate 101, a first gate electrode 105 exists on the first insulation film 107, a second insulation film exists on the first gate electrode 105, a second gate electrode 106 exists on the first and second insulation films, and first and second diffused layer regions 102, 103 having the same conductivity type exist on the semiconductor substrate 101 surface adjacent to the second gate electrode 106 sandwiching the second gate electrode 106 and is turned into a structure not two- dimensionally overlapped on the first gate electrode 105, the gate length of which is set to be about the wavelength of electron.
Inventors:
Hisao Kawaura
Application Number:
JP4969698A
Publication Date:
October 23, 2000
Filing Date:
March 02, 1998
Export Citation:
Assignee:
NEC
International Classes:
H01L21/8247; H01L27/115; H01L29/66; H01L29/68; H01L29/78; H01L29/788; H01L29/792; (IPC1-7): H01L29/78; H01L21/8247; H01L27/115; H01L29/66; H01L29/68; H01L29/788; H01L29/792
Domestic Patent References:
| JP6419768A | ||||
| JP63132478A | ||||
| JP730096A |
Attorney, Agent or Firm:
Nobuyuki Kaneda (2 others)