Title:
【発明の名称】磁気抵抗性メモリ構造大フラクション利用
Document Type and Number:
Japanese Patent JPH08504533
Kind Code:
A
Abstract:
A digital memory having a plurality of locations where selectively coincident currents can be selected to flow in a pair of wordline structures, or with a wordline structure paired with a composite line structure (and possibly a bit line structure), to continue an existing, or switch to an opposite, edge magnetization state in a composite line structure or, alternatively, continue or switch a magnetization state in a storage film cell used to magnetically bias such a composite line structure.
Inventors:
Pomme, Arthur buoy.
Application Number:
JP50840094A
Publication Date:
May 14, 1996
Filing Date:
September 21, 1993
Export Citation:
Assignee:
Non-Volatile Electronics, Incorporated
International Classes:
G11C11/15; G11C11/16; H01L21/8246; H01L27/105; H01L27/22; H01L43/08; (IPC1-7): G11C11/15
Domestic Patent References:
| JPS6055426A | 1985-03-30 | |||
| JPH03123928A | 1991-05-27 | |||
| JPS59125481A | 1984-07-19 | |||
| JPS63164127A | 1988-07-07 | |||
| JPS62164127A | 1987-07-20 | |||
| JP1144937B |
Attorney, Agent or Firm:
Shusaku Yamamoto