Title:
AMORPHOUS SILICON SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
Document Type and Number:
Japanese Patent JPS5844775
Kind Code:
A
Abstract:
PURPOSE:To obtain a solar cell having a high voltage electromotive force by a method wherein an amorphous Si device is composed of an N type layer, an intrinsic semiconductor layer and a P type layer and a doping agent consisting of a kind of group III element is included in the intrinsic semiconductor layer and the P type layer and the density of the P type layer is increased than that of the intrinsic semiconductor layer. CONSTITUTION:An Si evaporation source 8 covered with a shutter S1 and an evaporation source 10 consisting of a group III such as Al or the like covered with a shutter S2 are arranged on a base plate having an exhaust path 3 containing a butterfly valve 2 and a hydrogen gas discharge tube 7 at the lower face. Next, a bell jar 1 having a heater 5 at the inside of a ceiling and a stainless steel substrate 4 locating below the heater 5 is mounted on the base plate and the inside of the bell jar 1 is maintained at 10<-3>-10<-7>Torr and the substrate 4 connected to the negative terminal of a DC power source 6 is heated at 250-450 deg.C. At the same time, a hydrogen ion is poured in the bell jar from the discharge tube 7 and the shutters S1 and S2 are alternately opened and an amorphous Si layer 30 consisting of an N type layer 30n, an I layer 30i and a P type layer 30p having higher impurity density than that of the layer 30i is deposited and the deposition is repeated.
Inventors:
SATOU SHIGERU
SHINDOU MASANARI
OOTA TATSUO
SHIMA TETSUO
MIYOUKAN ISAO
SHINDOU MASANARI
OOTA TATSUO
SHIMA TETSUO
MIYOUKAN ISAO
Application Number:
JP14242681A
Publication Date:
March 15, 1983
Filing Date:
September 11, 1981
Export Citation:
Assignee:
KONISHIROKU PHOTO IND
International Classes:
H01L31/04; C23C14/00; H01L21/203; H01L31/20; (IPC1-7): H01L21/205; H01L31/04
Domestic Patent References:
| JPS564287A | 1981-01-17 |
Attorney, Agent or Firm:
Masahiko Oi