Title:
HOT ELECTRON TRANSISTOR
Document Type and Number:
Japanese Patent JPH0621435
Kind Code:
A
Abstract:
PURPOSE: To obtain a high current-amplification factor and provide a hot electron transistor which can operate speedily.
CONSTITUTION: When a distance measured in thickness direction from the center of the base of a hot electron transistor is set to x, a potential V(X) of the base is approximated to V(x)=-{(h/2π)2/8m}{β2cosh2(αx)} (A) (h; Planck's constant, m; electron mass) and β/α=2{n(n+1)}1/2 (n; integer) (B).
Inventors:
IMANAGA TOSHIHARU
Application Number:
JP19621792A
Publication Date:
January 28, 1994
Filing Date:
June 30, 1992
Export Citation:
Assignee:
SONY CORP
International Classes:
H01L29/06; H01L29/68; (IPC1-7): H01L29/68; H01L29/06
Attorney, Agent or Firm:
Masatomo Sugiura
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