PURPOSE: To provide multilayered thin metallic films which improve the strength of a thin film or plate of a metal or semiconductor, by laminating thin metallic films in multiple layers on the surface of said thin film or plate.

CONSTITUTION: Thin films 1, 2, 3 of dissimilar metals are laminated successively through thin film interfaces 4, 5 on the above-described surface by any of vacuum deposition, CVD and ion sputtering methods, whereby multlayered thin metallic films are formed. The 6 indicated as T-shaped marks of approximately equal intervals at the interfaces 4, 5 is the misfit dislocation formed so as to reduce the dissidence of the lattice constants of a set of thin films 1, 2 and 2, 3 sandwiching the interfaces 4, 5. Such multilayered thin metallic films are formed with the dislocation of a high density in the films of the films 1, 2, 3 and are therefore higher in strength as compared to bulk material or the like. The combination of the metallic materials wherein the difference in lattice constant is within 15%, the binding force of the interface is strong and the thicknesses of the respective layers are formed within several hundred atom layers is most preferable as the combination of the metallic materials constituting the multilayered thin metallic films, and about 1/100 of the ideal strength can be produced. There is, for example, a combination of a thin Cu film and a thin Ni film as such combination.