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Title:
FILM FORMING METHOD
Document Type and Number:
Japanese Patent JPS605875
Kind Code:
A
Abstract:

PURPOSE: To form a hardened film which is thick and is hardly strippable on a substrate by sticking alternately plural times the hardened films and thin films having good adhesion to said films on the substrate.

CONSTITUTION: The inside of a chamber 1 to be evacuated of a high frequency ion plating device is maintained under about 1×10-2 pressure of the gaseous Ar supplied from a gas supply means 4B and high frequency electric power is impressed to a high frequency coil 11 from a high frequency power source 12 to maintain a plasma atmosphere. An electron beam is irradiated from an electron gun 7 and a deflector 9 to the Ni in a crucible 6B to evaporate the Ni by heating. The evaporating particles of Ni are ionized in the plasma atmosphere and stick to a substrate. The Ni film 20A deposited by evaporation is formed to about 500 then the gas is changed over to gaseous N2 4A and the Ti in a crucible 6A is evaporated to form about 1μm hardened film 20B of TiN on the film 20A. The thin Ni film 20C, E, thick hardened films 20D, F of TiN are thereafter formed althernately in the same way. The hardened film of TiN which is thick and of which the internal stress is absorbed with the plural this Ni films is thus obtd.


Inventors:
WATANABE KANJI
OGAWA HIROYUKI
Application Number:
JP11345283A
Publication Date:
January 12, 1985
Filing Date:
June 23, 1983
Export Citation:
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Assignee:
NIPPON ELECTRON OPTICS LAB
International Classes:
C23C14/06; C23C14/14; (IPC1-7): C23C14/22
Domestic Patent References:
JPS5822374A1983-02-09



 
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