PURPOSE: To allow high quality growth of different kind of compound semiconductors on a substrate with high mass productivity without requiring high temperature heat treatment exceeding 1000°C.

CONSTITUTION: An Si substrate 1 is cleaned and heavily implanted with As ions (about 1×1016cm-2 at 50keV). It is then treated with a mixture solution of ammonia water and hydrogen peroxide water to form a weak bond oxide film on the surface of the substrate. Subsequently, it is introduced into an MBE (molecular beam epitaxy) system and subjected to heat treatment at 850°C for 20min while being irradiated with an As beam thus removing the oxide film from the surface and arranging the crystallinity on the surface implanted with ions. The substrate temperature is then lowered down to 550°C while irradiating the substrate with an As beam thus forming an n-type (Si doped) GaAs crystal growth layer 3 on the As ion implanted diffusion layer 2.