SPLITTING METHOD FOR COMPOUND SEMICONDUCTOR SUBSTRATE

Title:

SPLITTING METHOD FOR COMPOUND SEMICONDUCTOR SUBSTRATE

Document Type and Number:

Japanese Patent JPS6055640

Kind Code:

A

Abstract:

PURPOSE:To obtain elements having nearly vertical end surfaces in which burrs or cracks do not generate and the substrate does not unexpectedly break during handling by a method wherein cutting grooves are formed from the back side of the semiconductor substrate having a light emitting junction on the surface side, and scribe lines being provided in the surface corresponding to the cutting grooves, and the substrate being then split by application of pressure to the substrate. CONSTITUTION:The substrate 2 of compound semiconductor is adhered and fixed on a sheet 1 with the light emitting junction 3 side, i.e. the surface downward, and the cutting grooves 4, 4... of a depth of the degree out of the reach of the junction 3 are provided lengthwise and crosswise from the back surface with a dicing saw. Next, the back side is adhered to a sheet 5 for expanding and then held, and the surface side sheet 1 is stripped. Then, points of the surfce corresponding to the cutting grooves 4, 4... are provided with scribe lines 6, 6... by means of a diamond cutter, etc. The substrate 2 breaks by application of pressure from the back of the sheet 5 with a metal roller, etc.; however, cutting surfaces 7 at this time become nearly vertical according as cleavage advances.

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Inventors:

TAKASU HIROMI

Application Number:

JP16540083A

Publication Date:

March 30, 1985

Filing Date:

September 07, 1983

Export Citation:

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