PURPOSE: To obtain a minute complementary metal oxide semiconductor (CMOS) device by forming isolatedly the epitaxial layers through self-alignment manner in the form of island in such a method as partly including the surface of amorphous dielectric material on the single crystal Si substrate.
CONSTITUTION: The thermal oxide film 42 on the n type Si substrate 41 is selectively removed, and the smooth n type single crystal Si 43 is formed over the substrate at 950∼1,100°C with a pressure of 80Torr using H2 as the carrier and SiH2Cl2. After the oxide film 44 is formed, the p well 45 is formed selectively by the ordinary method, then the oxide film 46 is newly formed, the n well is then formed, and threshold voltages of these are respectively adjusted. Next, the phosphorus (P) additive poly-Si gate electrode 47 is formed and the n layer 49, p layer 50 are formed by the ion implantation selectively using the resist mask 48. After the appealing, such layers are covered with the phospho-silicate glass (PSG), the Al electrode 52 is provided and the Al-Si alloy is obtained under the H2 atmosphere, thus completing a device. According to this structure, a minute CMOS device can be obtained which remarkably reduces diffusion capacitance and moreover prevents existence of single- and poly-crystal transitional regions.
KUROKI YUKINORI
TANNO YUKINOBU
| JPS556831A | 1980-01-18 | |||
| JPS4944554A | 1974-04-26 | |||
| JP44013098A |