Title:
MANUFACTURE OF SOLAR BATTERY
Document Type and Number:
Japanese Patent JPS5950575
Kind Code:
A
Abstract:
PURPOSE:To reduce the uptake of residual dopants in a reaction chamber by a method wherein an intrinsic amorphous semiconductor layer with the uptake of an impurity of the first conductivity type is removed in a part or all part thereof, and then an intrinsic amorphous semiconductor layer is newly formed. CONSTITUTION:A first amorphous semiconductor layer is formed while the impurity of the first conductivity type is introduced. A second amorphous semiconductor layer is formed without introducing an impurity. A part or all part of the second amorphous semiconductor layer in the width direction is removed. A third amorphous semiconductor layer is formed thereon again without introducing an impurity. A fourth amorphous semiconductor layer is formed further thereon while the impurity of the second conductivity type is introduced.
Inventors:
KATOU MARI
Application Number:
JP15967182A
Publication Date:
March 23, 1984
Filing Date:
September 16, 1982
Export Citation:
Assignee:
KOGYO GIJUTSUIN
International Classes:
H01L31/04; H01L31/20; (IPC1-7): H01L31/04
Domestic Patent References:
| JPS5743413A | 1982-03-11 | |||
| JPS5762537A | 1982-04-15 |
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