PURPOSE: To improve the resolution when a fine pattern is formed using a chemically amplified resist by a method wherein before the resist applied on a substrate, a heat treatment is performed on the substrate at a specified temperature or higher to remove basic impurities adhered on the surface of the substrate.

CONSTITUTION: Wafers 2 housed in a wafer carrier 1 are resepctively placed on a wafer stage 15 in a space chamber 3. Then, the wafer 2 is heated by ultraviolet light lamps 6 at 200°C or higher for a prescribed time. After that, cooling water is made flow to on a cooling water circulating stage 14 to cool the wafer 2. After being cooled, the wafer 2 is taken out from a chamber via the chamber 3 and is immediately vacuum-sucked on a spinner chuck 12 of a resist coating device. While the chuck 12 is rotated, a P-type chemically amplified resist is dripped through a dispenser nozzle 10 to form a resist film on the surface of the wafer 2. Then, after the resist film is exposed, developed and a resist pattern is formed, the surface of the wafer 2 is etched in a prescribed thickness.