Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS5827325
Kind Code:
A
Abstract:
PURPOSE:To improve the quality of IC and its degree of integration by adhering an SiO2 film or a PSG film to a semiconductor substrate using the CVD method, doping an As ion on the surface of said film, then letting it undergo a high-temperature heat treatment. CONSTITUTION:A PSG film 10 is adhered to a field oxidization film 4 using the CVD method. Then, As ion is implanted in said film surface so that the film 10 contains As only up to the thickness of 2,000-3,000Angstrom , with its concentration of 10<19>-10<21>. The sample is then heated at 1,000 deg.C for about 30min. Since melting takes place at a low temperature, the fixed source region 2 and drain region 3 that have been heat-treated at the temperature above 1,000 deg.C, are subject to minimum diffusion and spreading.
Inventors:
INABA TOORU
IKUBO HIROYUKI
IKUBO HIROYUKI
Application Number:
JP12652881A
Publication Date:
February 18, 1983
Filing Date:
August 11, 1981
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L29/78; H01L21/316; (IPC1-7): H01L29/78
Attorney, Agent or Firm:
Koshiro Matsuoka