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Patent Searching and Data


Title:
FORMING METHOD FOR PATTERN
Document Type and Number:
Japanese Patent JPH0636982
Kind Code:
A
Abstract:

PURPOSE: To form a pattern of an organic thin film by forming a metal film having hydrogen brittleness on the thin film, supplying hydrogen to a predetermined part of the metal film to hydrogenate it, and then removing the predetermined part of the metal film and the thin film corresponding to the predetermined part.

CONSTITUTION: An organic thin film 2a and a metal film 3a are sequentially laminated to be formed on a board 1. Then, the board 1 is set in a vacuum atmosphere, and a hydrogen converged ion beam is scanned on the film 3a corresponding to a removed part of the film 2a while directly irradiating it. Thereafter, only a part 3' irradiated with the beam of the film 3a is removed by dry etching of a high frequency plasma. Then, the film 2a is removed through the part 3' by dissolving it by dry etching of O2 or organic solvent. The board 1 is removed in hydrogen and the residual entire film 3a is converted to metal hydride, and then removed by etching. Thus, a pattern of the thin film can be simply formed.


Inventors:
FUJII SUKEYUKI
NISHIO YOSHITAKA
FUJII TAKANORI
HAMADA YUJI
SHIBATA KENICHI
Application Number:
JP18679392A
Publication Date:
February 10, 1994
Filing Date:
July 14, 1992
Export Citation:
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Assignee:
SANYO ELECTRIC CO
International Classes:
G03F7/004; H01L21/027; H05K3/02; (IPC1-7): H01L21/027; G03F7/004
Attorney, Agent or Firm:
Takuji Nishino