PURPOSE: To form a pattern of an organic thin film by forming a metal film having hydrogen brittleness on the thin film, supplying hydrogen to a predetermined part of the metal film to hydrogenate it, and then removing the predetermined part of the metal film and the thin film corresponding to the predetermined part.
CONSTITUTION: An organic thin film 2a and a metal film 3a are sequentially laminated to be formed on a board 1. Then, the board 1 is set in a vacuum atmosphere, and a hydrogen converged ion beam is scanned on the film 3a corresponding to a removed part of the film 2a while directly irradiating it. Thereafter, only a part 3' irradiated with the beam of the film 3a is removed by dry etching of a high frequency plasma. Then, the film 2a is removed through the part 3' by dissolving it by dry etching of O2 or organic solvent. The board 1 is removed in hydrogen and the residual entire film 3a is converted to metal hydride, and then removed by etching. Thus, a pattern of the thin film can be simply formed.
NISHIO YOSHITAKA
FUJII TAKANORI
HAMADA YUJI
SHIBATA KENICHI
