【発明の名称】薄膜状半導体装置の作製方法。 - Semiconductor Energy Laboratory Co., Ltd.

Title:

【発明の名称】薄膜状半導体装置の作製方法。

Document Type and Number:

Japanese Patent JP3122699

Kind Code:

B2

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Inventors:

Shunpei Yamazaki

Application Number:

JP19193493A

Publication Date:

January 09, 2001

Filing Date:

July 06, 1993

Export Citation:

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Assignee:

Semiconductor Energy Laboratory Co., Ltd.

International Classes:

H01L21/20; H01L21/26; H01L21/265; H01L21/268; H01L21/316; H01L21/336; H01L29/78; H01L29/786; (IPC1-7): H01L29/786; H01L21/26; H01L21/268; H01L21/316; H01L21/336

Domestic Patent References:

JP62119974A
JP63105970A
JP1238024A
JP4110470A
JP5898933A
JP3132041A
JP334434A
JP58118154A
JP58147070A
JP324717A

Attorney, Agent or Firm:

Takehiko Suzue (6 outside)

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