PURPOSE: To form a thin film pattern at a high accuracy by dry etching using the resist, which has high performance.
CONSTITUTION: Sensitive polyimide or sensitive polyamide acid is formed into the film by the vapor phase polymerization, and this vapor phase polymerization film 1 is used as the resist so as to form the accurate pattern of the thin film 2 to be processed, which is provided under the resist. Consequently, since the film is synthesized by the vapor polymerization, generation of damage of the photosensitive group during the forming of film is eliminated so as to show the stabilized photosensitivity. Since this resist has high etching resistance, pattern can be directly formed on an organic film or a carbon film provided under the resist. Accuracy and productivity of the thin film pattern processing can be improved.
TAKEMOTO KAZUNARI
AMATATSU ATSUSHI
SAITO HARUNOBU
