PURPOSE: To obtain an amplification gate type GTO of good gate characteristic by a method wherein only the main GTO part is formed in the structure of anode-emitter (PE) short circuit, and only the amplification gate part is doped with lifetime killer.

CONSTITUTION: The amplification gate parts of a P-layer 2B, an N-layer 3, and a P-layer 4 are doped with the lifetime killer 6, and the amplification gate parts are not formed in the structure of PE short circuit. The main GTO part is in the structure of PE short circuit and has no dope of lifetime killer. Cathode electrodes are formed on N-layers 5A, and while gate electrodes are formed on the P-layer 4, etc. When only the main GTO part is formed in the structure of PE short circuit, and only the amplification gate part is doped with lifetime killer, the gate current IGT becomes at a suitable value that it is neither oversized nor undersized, and accordingly the cause of error ignition in a turn off period is removed.