PURPOSE: To enable duplication and alignment of a focusing ion beam as simply and accurately as the case of an electron beam direct picturing, without giving any damage to an alignment mark, by correcting a position of the target focusing ion beam based upon a detected position of a secondary electron mark signal.
CONSTITUTION: A position of an alignment mark can be known by the position of a pulse signal 4 under a state positional pulses 4, being generated electrically, of maximum and minimum values of a signal 3 obtained by differentiating the secondary electron signal in case of scanning with an ion beam. And, for example, when a voltage is changed over so as to obtain an ion to be implanted from a signal 4 of a light element ion, a positional signal 5 is detected in a position relatively differing by ΔtX second in time i.e. by Δx in distance, and when performing the same process about y-axis, positional difference between ion kinds can be known. A signal from an alignment mark on a wafer 29 is obtained through a scintillator 28 by a scanning of a light element ion beam 26, and after a positional information is sent to a computer 213 by a signal obtained through a signal processing system 210 and processed, a voltage of a deflection plate electrode 25 is controlled through a correcting system 211.
ASATA SUSUMU
MATSUI SHINJI
