PURPOSE: To produce a multilayered structure subject to high density and high degree of integration by a method wherein an element convertible from non-conductive to conductive status due to destruction of an insulting film by means of supplying the film with voltage is provided.

CONSTITUTION: A convertible element is composed of a silicon substrate 1, polycrystalline silicon layers 2a∼2e, silicon dioxide films 3a∼3d to be produced by means of oxidizing the surface of the polycrystalline silicon layers 2a, 2b etc. The silicon dioxides 3a∼3d are thin and the dielectric strength of which is remarkably lower than that of an oxide film of a single crystal silicon. The polycrystalline silicon layers 2d and 2e may be made conductive due to easy destruction of the silicon dioxide film 3d by means of supplying the gap between said layers 2d and 2e with voltage to make one bit memory feasible corresponding to destruction or non-destruction of the insulation.