PURPOSE: To facilitate bonding, and to reduce the cost of a blank by forming source and drain electrodes in succession by an alloy layer containing the component metal of gold or silver, a high-melting point metallic laver shaped so as to be stacked to one part and an aluminum layer formed so as to be stacked to one part regarding the electrode structure of a GaAs field-effect type transistor.

CONSTITUTION: The ohmic electrodes 13, 14 of a source and a drain are shaped by alloys containing gold or silver, such as gold-germainum, silver-indium-germanium, silver-tin or gold-germanium-nickel or the like or metal groups containing the alloys. High-melting point metals consisting of tantalum, tungsten, molybdenum or the like and further platinum-titanium laminating or the like or the combining layers 15 of the high-melting point metals are shaped so as to be stacked to one parts, and the aluminum layers 16 are further formed onto the metals or the layers 15. An aluminum wire can be used as a bonding wire, and the speed of bonding can be inceased by employing the same device as a silicon element.