Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS5818928
Kind Code:
A
Abstract:
PURPOSE:To smooth the surface of a semiconductor thin film substrate by using partial etching. CONSTITUTION:While rotating an epitaxial wafer 1 having protrusion 2 at high speed a resist 3 is dropped to the wafer surface. The resultant film covering the surface of the protrusion is far thinner than other portion of the film. This thinner film portion is selectively removed, then the protrusion is etched with the resist 3 applied as a mask, and finally the resist 3 is removed, making the surface without any protrusion available. Therefore, pour contact with a mask and mask damage can be avoided.
Inventors:
FUJISADA SHIYOUICHI
KATOU MASAMI
KATOU MASAMI
Application Number:
JP11803681A
Publication Date:
February 03, 1983
Filing Date:
July 28, 1981
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
H01L21/306; (IPC1-7): H01L21/306
Attorney, Agent or Firm:
Uchihara Shin