THIN FILM SEMICONDUCTOR DEVICE

Title:

THIN FILM SEMICONDUCTOR DEVICE

Document Type and Number:

Japanese Patent JPS58142566

Kind Code:

A

Abstract:

PURPOSE: To improve the junction characteristic in a poly Si thin film, by providing a low density N layer between a high density N layer and a direct or low density P layer by an ion implantation.

CONSTITUTION: N- layers 5 and 6 are formed between N+ layers 1 and 2, and a thin film substrate 3 by self-alignment to a gate wiring 4. The gate wiring is of a poly Si, an Al, a high melting point metal or the silicide thereof. By this constitution, the leakage current in a state of "gate-off" reduces by approx. one figure in a poly Si thin film semiconductor device which is rich in mass productivity and has mobility larger than that of an amorphous Si. Therefore, when it is used for the switching transistor array of a panel of liquid crystal display, a clear display can be obtained.

Inventors:

OGATA TOSHIAKI

Application Number:

JP2555982A

Publication Date:

August 24, 1983

Filing Date:

February 19, 1982

Export Citation:

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Assignee:

SUWA SEIKOSHA KK

International Classes:

H01L29/78; H01L21/331; H01L21/336; H01L27/12; H01L29/73; H01L29/786; (IPC1-7): G09F9/35; H01L29/04; H01L29/78

Attorney, Agent or Firm:

Kisaburo Suzuki (1 outside)

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