Title:
PROCESSING METHOD FOR END FACE OF SEMICONDUCTOR LASER
Document Type and Number:
Japanese Patent JPH04133382
Kind Code:
A
Abstract:
PURPOSE: To suppress evaporation of ammonia and to improve reproducibility of an end face processing step by controlling temperature of processing solution or pressurizing it.
CONSTITUTION: After a resonance mirror is formed by cleavage, it is dipped in (NH4)2S or (NH4)2SX at 15°C or lower controlled within ±1°C, or dipped in (NH4)2S or (NH4)2S under the pressure of 2 atms or more to process the end face of a semiconductor laser.
Inventors:
KAMIYAMA SATOSHI
MORI YOSHIHIRO
TAKAHASHI YASUHITO
ONAKA SEIJI
MORI YOSHIHIRO
TAKAHASHI YASUHITO
ONAKA SEIJI
Application Number:
JP25582590A
Publication Date:
May 07, 1992
Filing Date:
September 25, 1990
Export Citation:
Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
H01S5/00; (IPC1-7): H01S3/18
Attorney, Agent or Firm:
Akira Kobiji (2 outside)