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Patent Searching and Data


Title:
MOS TRANSISTOR CIRCUIT
Document Type and Number:
Japanese Patent JPS5813031
Kind Code:
A
Abstract:

PURPOSE: To perform high-speed operation by supplying a driving stage with a power voltage higher than the power voltage of a final stage which has a capacitive load.

CONSTITUTION: When an input signal is applied to a terminal 16, MOS transistors (TR) 12 and 13 turn on and an MOSTR 14 turns off. A capacitive load 15 is therefore driven at a power voltage VDD2. When the input signal is ceased, the TRs 12 and 13 turn off and a power voltage VDD1 higher than a power voltage VDD2 is applied to the gate of the TR14. Consequently, the TR14 turns on speedily to charge the capacitive load 15 abruptly.


Inventors:
NAKAMURA TATSU
Application Number:
JP11248481A
Publication Date:
January 25, 1983
Filing Date:
July 17, 1981
Export Citation:
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Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
H03K17/687; H03K19/017; (IPC1-7): H03K17/687
Attorney, Agent or Firm:
Shigetaka Awano (1 person outside)