Title:
RESISTANCE ELEMENT FOR JOSEPHSON INTEGRATED CIRCUIT
Document Type and Number:
Japanese Patent JPS587889
Kind Code:
A
Abstract:
PURPOSE:To enhance the reliability of a resistance element by employing an Nb-Si compound instead of Au-In alloy. CONSTITUTION:The superconductive critical temperature of a thin Nb-Si film varies between 4 and 10K when the density of Si is 10'30at%. Accordingly, a resistance element is formed by reducing the critical temperature to lower value than the operating temperature of a Josephson integrated circuit by locally varying the content of an Si to the Nb. In the formation, an Nb-Si compound thin film is formed, for example, on a sapphire substrate as a resistance element 1. A Josephson junction element 2 is formed on the same substrate as a lower electrode. A barrier layer is formed by depositing an Si film on an Nb film, and the upper electrode is the Nb film, and 3 is an Nb conductor.
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Inventors:
NISHINO JIYUICHI
KAWABE USHIO
SHIGETA JIYUNJI
KAWABE USHIO
SHIGETA JIYUNJI
Application Number:
JP10557081A
Publication Date:
January 17, 1983
Filing Date:
July 08, 1981
Export Citation:
Assignee:
HITACHI LTD
International Classes:
H01L39/22; (IPC1-7): H01L39/22
Attorney, Agent or Firm:
Toshiyuki Usuda
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