PURPOSE: To obtain a material which can endure against energization in a high current density and simultaneously has an electric resistivity lower than an aluminum-copper alloy by adding chromium or zirconium to copper in specific content ratio.

CONSTITUTION: A silicon substrate is thermalloy oxidized to form a silicon oxidized film layer on the surface, chromium is deposited as an adhesive layer to deposit copper-0.6wt% chromium alloy, a wiring pattern is formed by photoetching and annealed. A thin alloy film, to which 8wt% of chromium and 4wt% of zirconium are respectively added to copper, has an electric resistance lower than W, Mo film which has excellent electromigration as compared with Cu alloy, and if substantially 0.02 and 0.05wt% or larger of Zr and Cr contents are contained, a lifetime longer than that of AlCuTa alloy can be obtained.