Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS5848420
Kind Code:
A
Abstract:
PURPOSE:To easily and economically obtain a semiconductor device having a soldering layer at a rear electrode by a method wherein a lattice-like blocked film is formed with a heat-resistance photoresist material at the rear electrode side of a semiconductor wafer and furthermore, a soldering layer is formed by using soldering paste. CONSTITUTION:A lattice-like blocked film 11 partitioning each element 8 is formed with a photoresist material having higher heat-resistance performance than the melting point of solder at the rear electrode 9 side of a semiconductor wafer 7, and furthermore, a soldering paste layer 12 is formed on the whole area of the rear face. With the wager 7 heated, a dissolved soldering layer 14 having thin wall thickness and contacting with the blocked film 11 out of the dissolved layer condenses into a dissolved soldering layer 13 having thick film thickness and the blocked film 11 is exposed to the outside. Therefore the layer 14 is dissolved and removed. The obtained wafer 7 can be cut with a blade without causing blinding.
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| JPS5844843 | [Title of the device] Semiconductor device |
| JPS60224236 | MANUFACTURE OF SEMICONDUCTOR DEVICE |
Inventors:
NAKAMURA YASUSHI
Application Number:
JP14691081A
Publication Date:
March 22, 1983
Filing Date:
September 16, 1981
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
H01L21/52; H01L21/30; H01L21/301; (IPC1-7): H01L21/58
Domestic Patent References:
| JPS5193867A | 1976-08-17 | |||
| JPS53115064A | 1978-10-07 | |||
| JPS52127750A | 1977-10-26 |
Attorney, Agent or Firm:
Shogo Ehara