Title:
HIGHLY EFFICIENT AMORPHOUS SILICON SOLAR CELL
Document Type and Number:
Japanese Patent JPS5814582
Kind Code:
A
Abstract:
PURPOSE:To obtain a highly efficient solar cell by a method wherein, in a P-I-N junction amorphous silicon solar cell, the cell is constituted using the formula of ITO-Sn2-PIN or ITO-Sn2-NPI, and an SnO2 film is formed in the thickness of 30-500Angstrom . CONSTITUTION:In the solar cell of a constitution wherein the rays of the sun are irradiated from P side, the cell is composed of a transparent substrate 1 made of glass or the like, an ITO film 2 consisting of In2O3 and SnO2, an SnO2 film 3, a P type amorphous semiconductor 4, an intrinsic amorphous silicon 5, an N type amorphous silicon 6 and an Al electrode 7 in the above-mentioned order starting from P side. Also, in the solar cell of the constitution wherein the rays of the sun are irradiated from N side, the cell is composed of an ITO film 8, an SnO2 film 9, an N type amorphous semiconductor 10, an intrinsic amorphous silicon 11, a P type amorphous silicon 12, a metal substrate 13 such as stainless steel or the like in the above-mentioned order starting from N side. Also, in either of the above composition, an amorphous semiconductor expressed by a general formula of a-Si1-xCx : H or the like is to be used as a P or N layer semiconductor which comes in contact with the SnO2 film.
Inventors:
HAMAKAWA YOSHIHIRO
OOWADA YOSHIHISA
OOWADA YOSHIHISA
Application Number:
JP11257181A
Publication Date:
January 27, 1983
Filing Date:
July 17, 1981
Export Citation:
Assignee:
KANEGAFUCHI CHEMICAL IND
International Classes:
H01L31/0224; H01L31/04; H01L31/042; H01L31/06; H01L31/075; H01L31/20; (IPC1-7): H01L31/04
Attorney, Agent or Firm:
Toshihiko Uchida