Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS6028229
Kind Code:
A
Abstract:
PURPOSE:To shorten a manufacturing process for a semiconductor device by implanting ions to a semiconductor, coating the surface of the semiconductor with a metallic film, which does not react chemically with the semiconductor at a temperature lower than the annealing temperature of an ion implanted region, activating implanted ions while using the metallic film as a cap material and leaving a part of the metallic film as an electrode and removing others. CONSTITUTION:Si ions are implanted to a semic-insulating GaAs substrate 11, and an ion implanted region 21 as an operating layer is formed to a surface layer. The whole surface is coated with a Schottky barrier gate electrode metal 41 consisting of TiW, etc., which do not react with GaAs in a post annealing process, and the region 21 is changed into an activated region 22 through heat treatment in H2 gas at 800 deg.C while using the metal 41 as a cap material. The metal 41 is left as a gate electrode 411 and others are removed through dry etching employing SF6 gas, and a source electrode 511 and a drain electrode 512 consisting of an AuGe alloy extending over the substrate 11 from the end sections of the region 22 are applied on both sides of the electrode 411.
More Like This:
Inventors:
KOZUKA MICHI
Application Number:
JP13587583A
Publication Date:
February 13, 1985
Filing Date:
July 27, 1983
Export Citation:
Assignee:
KOGYO GIJUTSUIN
International Classes:
H01L29/812; H01L21/265; H01L21/324; H01L21/338; H01L29/76; H01L29/772; (IPC1-7): H01L29/76