Title:
FORMING METHOD OF FINE PATTERN
Document Type and Number:
Japanese Patent JPS5941840
Kind Code:
A
Abstract:
PURPOSE:To obtain the fine pattern using the thin thickness of a thin layer consisting of a growth layer as stripe width by growing the thin layer composed of another semiconductor crystal different from a projected section in an epitaxial manner and removing only the projecting section through selective etching. CONSTITUTION:A projecting section 3 is formed to the surface of a semiconductor crystalline substrate 1 by using a mask 2 consisting of a proper dielectric, a crystal face vertical to the surface of the substrate 1 appears in a side surface 4, and a suitable clerance is also formed between the projecting section 3 and the surface of the substrate in a trough section and the surface of the substrate is coated with a mask 5. The semiconductor crystal different from a substrate crystal is grown in an epitaxial manner, crystalline orientations are selected so that a lateral growth rate in the side surface 4 is increased extremely by utilizing a difference due to the face orientations of a growth rate, and the epitaxial growth layer 6 of the thin layer is obtained. The masks 2 and 5 are removed, and the projecting section 3 is removed by using a selective etchent, an etching rate thereof differs largely. A control at nanometer orders is enabled sufficiently through atomic-molecular deposition technique at an Angstrom unit in the thickness direction, such as MBE, MO-CVD, etc. regarding the thickness of the thin layer 6.
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Inventors:
MIKAMI OSAMU
YAMAUCHI YOSHIHARU
YAMAUCHI YOSHIHARU
Application Number:
JP15188782A
Publication Date:
March 08, 1984
Filing Date:
September 01, 1982
Export Citation:
Assignee:
NIPPON TELEGRAPH & TELEPHONE
International Classes:
H01L21/203; C23F4/00; H01L21/20; H01L21/302; H01L21/3065; (IPC1-7): H01L21/203; H01L21/205
Attorney, Agent or Firm:
Tsuneo Shiramizu (1 person outside)