Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS605537
Kind Code:
A
Abstract:
PURPOSE:To enable to correct the characteristic of a semiconductor resistance element by employing as an external lead electrode for monitoring the characteristics a silicon layer, thereby readily monitoring the characteristics. CONSTITUTION:A polycrystalline silicon layer 7 is formed on an oxidized film 1, the layer 7 is selectively removed to form a resistance element having a terminal, and the element is then covered by thermal oxidation with an oxidized film. Then, the oxidized film covered on the both terminals 12, 13 of the element is selectively removed, high density boron atoms are diffused in the terminals 11, 12, and again covered as a high-doped low resistance region with the oxidized film. Then, the oxidized film covered on the region 14 except the region in which high density boron atoms are diffused, i.e., the body of the resistance element is selectively removed, the boron atoms of the amount controlled to obtain desired resistance value is accurately implanted by an ion implanting method on the region 14, and again covered with the oxidized film, thereby obtaining a monitoring resistance element.
Inventors:
AOMURA KUNIO
Application Number:
JP9420384A
Publication Date:
January 12, 1985
Filing Date:
May 11, 1984
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
H01L21/66; H01L21/822; H01L27/04; (IPC1-7): H01L21/66
Domestic Patent References:
| JP46019012A | ||||
| JP46003536U | ||||
| JPS492485A | 1974-01-10 |
Attorney, Agent or Firm:
Uchihara Shin
Next Patent: JPS605538